La '''invención del transistor''' es un caso prototípico de desarrollo combinado científico-tecnológico, es decir, de lo que en esta enciclopedia se denomina [[tecnociencia]]. La historia es poco conocida, parcialmente debido a que involucra conocimientos no vulgares de Física de Semiconductores, parcialmente debido a la escasa comprensión que se tiene del fenómeno cultural - económico - tecnológico de la invención de [[artefacto]]s. Se incluye aquí porque permite plantear interrogantes e ilustrar aspectos de importancia para la caracterización de este proceso.
==Antecedentes==
[[Archivo:Detector a galena.jpg|300px|right|thumb|<small><center>'''El detector a galena consiste en un alambre conductor que toca un trozo de galena policristalina.'''</center></small>]]
El detector usado en las primeras radios a galena fue el primer dispositivo semiconductor.
The first patent[1] for the field-effect transistor principle was filed in Canada by Austrian-Hungarian physicist Julius Edgar Lilienfeld on October 22, 1925, but Lilienfeld published no research articles about his devices, and they were ignored by industry. In 1934 German physicist Dr. Oskar Heil patented another field-effect transistor.[2] There is no direct evidence that these devices were built, but later work in the 1990s show that one of Lilienfeld's designs worked as described and gave substantial gain. Legal papers from the Bell Labs patent show that William Shockley and a co-worker at Bell Labs, Gerald Pearson, had built operational versions from Lilienfeld's patents, yet they never referenced this work in any of their later research papers or historical articles.[3]
The work emerged from their war-time efforts to produce extremely pure germanium "crystal" mixer diodes, used in radar units as a frequency mixer element in microwave radar receivers. A parallel project on germanium diodes at Purdue University succeeded in producing the good-quality germanium semiconducting crystals that were used at Bell Labs. [4] Early tube-based technology did not switch fast enough for this role, leading the Bell team to use solid state diodes instead. With this knowledge in hand they turned to the design of a triode, but found this was not at all easy. John Bardeen eventually developed a new branch of quantum mechanics known as surface physics to account for the "odd" behavior they saw, and Bardeen and Walter Brattain eventually succeeded in building a working device.
After the war, Shockley decided to attempt the building of a triode-like semiconductor device. He secured funding and lab space, and went to work on the problem with Bardeen and Brattain.
The key to the development of the transistor was the further understanding of the process of the electron mobility in a semiconductor. It was realized that if there was some way to control the flow of the electrons from the emitter to the collector of this newly discovered diode, one could build an amplifier. For instance, if you placed contacts on either side of a single type of crystal the current would not flow through it. However if a third contact could then "inject" electrons or holes into the material, the current would flow.
Actually doing this appeared to be very difficult. If the crystal were of any reasonable size, the number of electrons (or holes) required to be injected would have to be very large -– making it less than useful as an amplifier because it would require a large injection current to start with. That said, the whole idea of the crystal diode was that the crystal itself could provide the electrons over a very small distance, the depletion region. The key appeared to be to place the input and output contacts very close together on the surface of the crystal on either side of this region.
Brattain started working on building such a device, and tantalizing hints of amplification continued to appear as the team worked on the problem. Sometimes the system would work but then stop working unexpectedly. In one instance a non-working system started working when placed in water. The electrons in any one piece of the crystal would migrate about due to nearby charges. Electrons in the emitters, or the "holes" in the collectors, would cluster at the surface of the crystal where they could find their opposite charge "floating around" in the air (or water). Yet they could be pushed away from the surface with the application of a small amount of charge from any other location on the crystal. Instead of needing a large supply of injected electrons, a very small number in the right place on the crystal would accomplish the same thing.
Their understanding solved the problem of needing a very small control area to some degree. Instead of needing two separate semiconductors connected by a common, but tiny, region, a single larger surface would serve. The emitter and collector leads would both be placed very close together on the top, with the control lead placed on the base of the crystal. When current was applied to the "base" lead, the electrons or holes would be pushed out, across the block of semiconductor, and collect on the far surface. As long as the emitter and collector were very close together, this should allow enough electrons or holes between them to allow conduction to start.
An early witness of the phenomenon was Ralph Bray, a young graduate student. He joined the germanium effort at Purdue University in November 1943 and was given the tricky task of measuring the spreading resistance at the metal-semiconductor contact. Bray found a great many anomalies, such as internal high-resistivity barriers in some samples of germanium. The most curious phenomenon was the exceptionally low resistance observed when voltage pulses were applied. This effect remained a mystery because nobody realised, until 1948, that Bray had observed minority carrier injection - the effect that was identified by William Shockley at Bell Labs and made the transistor a reality.
Bray wrote: "That was the one aspect that we missed, but even had we understood the idea of minority carrier injection...we would have said, 'Oh, this explains our effects.' We might not necessarily have gone ahead and said, 'Let's start making transistors', open up a factory and sell them... At that time the important device was the high back voltage rectifier". [5]
==Fuentes==
* Nelson, Richard; [http://www.nber.org/chapters/c2141 ''The link between science and invention: the case of the transistor''](El vínculo entre la ciencia y la invención: el caso del transistor). En ''The rate and direction of inventive activity; : economic and social factors''(El ritmo y rumbo de la inventiva: factores económicos y sociales); National Bureau of Economic Research; EEUU; ISBN 08701430402; pp. 549‑584.* [http://en.wikipedia.org/wiki/History_of_the_transistor Historia del transistor] en Wikipedia en inglés.